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MBM30LV0032-PFTR - 32M (4M X 8) BIT NAND-type RES 150-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA

MBM30LV0032-PFTR_1143508.PDF Datasheet


 Full text search : 32M (4M X 8) BIT NAND-type RES 150-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA


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MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR FLASH MEMORY 32M (4M x 8) BIT NAND-type
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Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YI 32M x 8 Bit NAND Flash Memory
Samsung Electronic
Samsung semiconductor
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Samsung Electronic
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SIEMENS AG
TC58NS256DC EA10128 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
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Elpida Memory
 
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